Hot-carrier stressing of NPN polysilicon emitter bipolar transistors incorporating fluorine
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چکیده
منابع مشابه
Hot-Carrier Stressing of NPN Polysilicon Emitter Bipolar Transistors Incorporating Fluorine
The effects of fluorine on the hot-carrier induced degradation in low-thermal-budget polysilicon-emitter NPN bipolar transistors have been examined. Forward Gummel plots, base-emitter (BE) diode characteristics, and stress currents were measured during reverse BE bias stress. Fluorinated devices behave similarly under stress to nonfluorinated devices retaining the initial improvement observed i...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2003
ISSN: 0018-9383
DOI: 10.1109/ted.2003.812502